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EFFECT OF OXYGEN AND COPPER ON THE DEFECT CLUSTER IN NEUTRON-IRRADIATED P-TYPE SILICON.USAMI A; TOKUDA Y.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 7; PP. 2823-2831; BIBL. 22 REF.Article

INVESTIGATION OF NEUTRON-PRODUCED DEFECTS IN SILICON BY TRANSCONDUCTANCE MEASUREMENTS OF JUNCTION FIELD-EFFECT TRANSISTORS.TOKUDA Y; USAMI A.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 11; PP. 4952-4959; BIBL. 25 REF.Article

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Theoretical simulations of optical confinement in dye-sensitized nanocrystalline solar cellsUSAMI, A.Solar energy materials and solar cells. 2000, Vol 64, Num 1, pp 73-83, issn 0927-0248Article

A new theoretical model of a dye-sensitized nanocrystalline photoelectrochemical cellUSAMI, A.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp L886-L888, issn 0021-4922, 2Article

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ANODIC FORMATION OF SN-O₂-SI HETEROJUNCTION SOLAL CELLS AT ROOM TEMPERATURE.USAMI A; ISHIHARA S.1977; OPT. QUANTUM ELECTRON.; G.B.; DA. 1977; VOL. 9; NO 4; PP. 357-359; BIBL. 4 REF.Article

EVALUATION OF INTERFACE STATES IN MOS STRUCTURES BY DLTS WITH A BIPOLAR RECTANGULAR WEIGHTING FUNCTIONTOKUDA Y; HAYASHI M; USAMI A et al.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 5; PP. 895-898; BIBL. 9 REF.Article

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EFFECT OF SWIRLS AND STACKING FAULTS ON THE MINORITY CARRIER LIFETIME IN SILICON MOS CAPACITORS.USAMI A; OKURA K; MAKI T et al.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 5; PP. L63-L65; H.T. 1; BIBL. 11 REF.Article

A NEW CHARACTERISTIC OF THE NEUTRON-IRRADIATED SILICON SOLAR CELLS.YAMAJI K; USAMI A; OKAJIMA K et al.1976; OPT. QUANTUM ELECTRON.; G.B.; DA. 1976; VOL. 8; NO 4; PP. 367-370; BIBL. 10 REF.Article

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STUDIES OF NEUTRON-PRODUCED DEFECTS IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPYTOKUDA Y; SHIMIZU N; USAMI A et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 2; PP. 309-315; BIBL. 22 REF.Article

THE EFFECT OF SWIRL DEFECTS ON THE MINORITY CARRIER LIFE-TIME IN HEAT-TREATED SILICON CRYSTALS.USAMI A; FUJII Y; MORIOKA K et al.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 6; PP. 899-910; BIBL. 22 REF.Article

A SIMPLIFIED INSTRUMENT FOR SOLID-STATE HIGH-GAMMA DOSIMETRYTANAKA R; TAJIMA S; USAMI A et al.1976; INTERNATION. J. APPL. RAD. ISOTOPES; G.B.; DA. 1976; VOL. 27; NO 2; PP. 73-77; BIBL. 10 REF.Article

Current DLTS with a bipolar rectangular weighteing function for MOS structuresTOKUDA, Y; USAMI, A.Japanese journal of applied physics. 1983, Vol 22, Num 10, issn 0021-4922, 1629Article

En Japonais = Photo acoustic method to evaluate degradation of coated steel during cyclic corrosion testsTSURU, T; USAMI, A.Tetsu-to-hagané. 1991, Vol 77, Num 7, pp 1146-1153, issn 0021-1575Article

Current DLTS with a bipolar rectangular weighting function for a neutron-irradiated P-type SiTOKUDA, Y; USAMI, A.Japanese journal of applied physics. 1983, Vol 22, Num 2, issn 0021-4922, 371Article

Characteristics of electron traps in Si-implanted and rapidly thermal-annealed GaAsKITAGAWA, A; USAMI, A; WADA, T et al.Journal of applied physics. 1988, Vol 63, Num 2, pp 414-420, issn 0021-8979Article